DocumentCode
1437278
Title
Conduction intersubband (In,Ga)As/GaAs quantum dot infrared photodetectors
Author
Pan, D. ; Tow, E.
Author_Institution
Lab. for Opt. & Quantum Electron., Virginia Univ., Charlottesville, VA, USA
Volume
34
Issue
19
fYear
1998
fDate
9/17/1998 12:00:00 AM
Firstpage
1883
Lastpage
1884
Abstract
The authors report a 40-period (In,Ga)As/GaAs normal-incidence quantum dot infrared photodetector operating in the wavelength range 8-14 μm. A primary intersubband transition peak is observed at a wavelength of 12.5 μm (E0→E1), and a secondary peak at 11.3 μm (E0→E2). The measured intersubband energy spacing is in good agreement with calculations. The normal-incidence peak responsivity at the bias voltage of -6 V is ~0.17 A/W. The background-limited performance temperature of our devices is found to be 62 K
Keywords
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; photodetectors; semiconductor quantum dots; (InGa)As-GaAs; -6 V; 62 K; 8 to 14 micron; conduction intersubband type; infrared photodetectors; intersubband energy spacing; intersubband transition peak; normal-incidence peak responsivity; quantum dot IR photodetectors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981278
Filename
722406
Link To Document