Title :
Correlation between high-voltage kink and substrate current in GaAs MESFETs
Author :
Chan, Y.-J. ; Huang, J.W.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
fDate :
9/17/1998 12:00:00 AM
Abstract :
The kink effect in GaAs MESFETs has been studied by evaluating ungated substrate current. Through the investigations of different buffer structures and epi-ready wafers from vendors, the authors found that kinks appearing in the high-voltage regime are related to the interface states, which may be associated with the residual impurities in the epi-ready wafers
Keywords :
gallium arsenide; GaAs; GaAs MESFETs; HV kink; buffer structures; epi-ready wafers; high-voltage kink; interface states; residual impurities; substrate current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981294
