Title :
Blue and green electroluminescence from MBE grown GaN/InGaN heterostructures
Author :
Tews, H. ; Averbeck, R. ; Graber, A. ; Riechert, H.
Author_Institution :
Central Res. Labs., Siemens AG, Munich, Germany
fDate :
10/10/1996 12:00:00 AM
Abstract :
Blue and green electroluminescence from GaN/InGaN p-n junctions is reported. The layer sequences were grown by molecular beam epitaxy on sapphire substrates. Room temperature electroluminescence was recorded at 470 nm (blue) and 513 nm (green) wavelengths
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; indium compounds; light emitting diodes; molecular beam epitaxial growth; p-n heterojunctions; photoluminescence; semiconductor growth; 470 nm; 513 nm; Al2O3; GaN-InGaN; MBE grown GaN/InGaN heterostructures; blue electroluminescence; green electroluminescence; molecular beam epitaxy; p-n junctions; room temperature electroluminescence; sapphire substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961335
