Title :
Fast fabrication of InP-based HBT using a novel coplanar design
Author :
Auer, U. ; Kim, S.O. ; Agethen, M. ; Velling, P. ; Prost, W. ; Tegude, F.J.
Author_Institution :
Dept. of Solid-State-Electron., Gerhard-Mercator Univ., Duisburg, Germany
fDate :
9/17/1998 12:00:00 AM
Abstract :
The authors report a novel contact design and technology for heterojunction bipolar transistors. The design consists of a base (B)-emitter (E)-collector (C) configuration with a T-shaped base. This configuration enables coplanar access to the emitter from both ground lines without air-bridge crossings. This leads to a very fast HBT fabrication procedure consisting of a double self-alignment process and only two metallisation steps
Keywords :
III-V semiconductors; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; semiconductor device metallisation; B-E-C contact configuration; InP; InP-based HBT; T-shaped base; base-emitter-collector configuration; contact design; coplanar design; double self-alignment process; fast fabrication; heterojunction bipolar transistors; metallisation steps;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981295
