Title :
Formation of ultrathin gate oxides with low-dose nitrogen implantation into Si substrates
Author :
Bark, J.O. ; Kim, S.W.
Author_Institution :
Fab Oper., Anan Semicond., Kyunggi, South Korea
fDate :
9/17/1998 12:00:00 AM
Abstract :
Ultrathin gate oxides (23-40 Å) have been grown on nitrogen implanted Si substrates with doses ranging from 9×1012 to 5×1014/cm2 at 850°C in dry O2 ambient for 18 min 50 s. The controlled growth of ultrathin gate oxides is achieved by performing the post-implant RTA after the pad oxide removal
Keywords :
CMOS integrated circuits; MOSFET; dielectric thin films; integrated circuit technology; ion implantation; nitrogen; oxidation; rapid thermal annealing; silicon; substrates; 1080 s; 23 to 40 A; 850 C; CMOSFETs; N implanted Si substrates; O2; PMOSFET; Si substrates; Si:N; SiO2-Si:N; controlled growth; dry O2 ambient; low-dose nitrogen implantation; pad oxide removal; post-implant RTA; ultrathin gate oxide formation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981310
