Title :
Interface trap generation in MOS transistors at high current densities
Author :
Neugroschel, A. ; Sah, C.T. ; Cao, W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
fDate :
9/17/1998 12:00:00 AM
Abstract :
A new interface trap generation pathway is demonstrated in MOS transistors. The pathway is due to the electrical activation or dehydrogenation of the electronic traps at the SiO2-Si interface via chemical reduction by atomic hydrogen released from the interconnect during high-current density low-voltage stress
Keywords :
MOSFET; current density; electron traps; hydrogen; interface states; semiconductor-insulator boundaries; MOS transistors; SiO2-Si; SiO2/Si interface; atomic hydrogen; chemical reduction; dehydrogenation; electrical activation; electronic traps; high current densities; interconnect; interface trap generation pathway; low-voltage stress;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981312
