• DocumentCode
    1437325
  • Title

    Interface trap generation in MOS transistors at high current densities

  • Author

    Neugroschel, A. ; Sah, C.T. ; Cao, W.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
  • Volume
    34
  • Issue
    19
  • fYear
    1998
  • fDate
    9/17/1998 12:00:00 AM
  • Firstpage
    1889
  • Lastpage
    1891
  • Abstract
    A new interface trap generation pathway is demonstrated in MOS transistors. The pathway is due to the electrical activation or dehydrogenation of the electronic traps at the SiO2-Si interface via chemical reduction by atomic hydrogen released from the interconnect during high-current density low-voltage stress
  • Keywords
    MOSFET; current density; electron traps; hydrogen; interface states; semiconductor-insulator boundaries; MOS transistors; SiO2-Si; SiO2/Si interface; atomic hydrogen; chemical reduction; dehydrogenation; electrical activation; electronic traps; high current densities; interconnect; interface trap generation pathway; low-voltage stress;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981312
  • Filename
    722413
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1437325