DocumentCode
1437331
Title
Il-VI laser diode with low operating voltage and long device lifetime
Author
Sanaka, Y. ; Okuyama, H. ; Kijima, S. ; Kato, E. ; Noguchi, H. ; Ishibashi, A.
Author_Institution
Res. Center, Sony Corp., Yokohama, Japan
Volume
34
Issue
19
fYear
1998
fDate
9/17/1998 12:00:00 AM
Firstpage
1891
Lastpage
1892
Abstract
The authors have fabricated a ZnCdSe/ZnSSe/ZnMgSSe separated confinement heterostructure (SCH) laser diode (LD) with a 3 nm ZnTe:N contact layer/ZnSe:N/ZnTe:N superlattice layer (SL)/ZnSe:N cap layer with optimised [N] and a ZnCdSe active layer with VI-rich growth conditions and optimised stripe width. The LD achieved over 300 h LD operation at a constant output power of 1 mW at low voltage (4 V)
Keywords
II-VI semiconductors; cadmium compounds; magnesium compounds; molecular beam epitaxial growth; ohmic contacts; semiconductor lasers; sulphur compounds; zinc compounds; 1 mW; 3 nm; 3.5 to 4 V; 300 hr; Il-VI laser diode; MBE growth; VI-rich growth conditions; ZnCdSe active layer; ZnCdSe-ZnSSe-ZnMgSSe; ZnCdSe/ZnSSe/ZnMgSSe SCH LD; ZnSe:N cap layer; ZnSe:N-ZnTe:N; ZnSe:N/ZnTe:N superlattice layer; ZnTe:N contact layer; long device lifetime; low operating voltage; ohmic contact optimisation; optimised stripe width; separated confinement heterostructure;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981288
Filename
722414
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