Title :
66% CW wallplug efficiency from Al-free 0.98 μm-emitting diode lasers
Author :
Botez, D. ; Mawst, L.J. ; Bhattacharya, Avik ; Lopez, J. ; Li, Jie ; Kuech, T.F. ; Iakovlev, V.P. ; Suruceanu, G.I. ; Caliman, A. ; Syrbu, A.V.
Author_Institution :
Reed Center for Photonics, Wisconsin Univ., Madison, WI
fDate :
10/10/1996 12:00:00 AM
Abstract :
0.98 μm-emitting, broad-waveguide-type InGaAs/InGaP/GaAs diode lasers have been optimised for maximum wallplug efficiency. Optimised-face-coated, 100 μm-widestripe, 500 μm-long devices having InGaAsP optical-waveguide thicknesses of 0.6 and 1.2 μm provide maximum wallplug efficiencies of 66% and 62%, respectively. Carbon-doped cap layers allow for a series resistance of 0.08 Ω for devices with 100×500 μm2 contact area
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser reliability; semiconductor lasers; waveguide lasers; 0.08 ohm; 0.6 micron; 0.98 micrometre; 1.2 micron; 100 micron; 500 micron; 62 percent; 66 percent; CW wallplug efficiency; III-V semiconductors; InGaAs-InGaP-GaAs; broad-waveguide-type laser; cap layers; contact area; diode lasers; optical-waveguide thicknesses; optimised-face-coated devices; series resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961300
