DocumentCode
1437422
Title
Electrical properties of PECVD oxide films deposited at room temperature
Author
Kim, K. ; Song, Y. ; Lee, G.S. ; Song, J.
Author_Institution
Dept. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA, USA
Volume
32
Issue
21
fYear
1996
fDate
10/10/1996 12:00:00 AM
Firstpage
2015
Lastpage
2016
Abstract
The authors discuss the electrical properties of silicon oxide films deposited at room temperature by PECVD, using disilane as the silicon source. In experiments, the interface trap density of the films with post-metallisation anneal showed a minimum value of 6.33×10 cm-2 eV-1, which is 36.6% lower than that of the as-deposited films. The authors also show that the films annealed in hydrogen-containing ambient reduced the early breakdown failures, resulting in an overall improvement of film integrity
Keywords
annealing; dielectric thin films; electric breakdown; electron traps; interface states; plasma CVD; silicon compounds; PECVD oxide films; SiO2; disilane source; early breakdown failures; electrical properties; film integrity; interface trap density; post-metallisation anneal;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19961313
Filename
542902
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