Electronic properties of filtered cathodic vacuum arc (FCVA) deposited silicon thin films

The electronic properties of silicon films deposited in a filtered cathodic vacuum arc (FCVA) from a highly doped silicon target have been studied by the authors, and correlated with growth conditions. Films with the best electrical properties were deposited with elevated growth surface temperatures (200-300°C) and low background pressures (~10 ⁴ torr) of hydrogen. The number of times that the cathodic arc had to be retriggered during the deposition of a film also significantly affected its electronic properties. Room temperature photo-conductivities ~10^-6 (Ω.cm)^-1 have been measured at AMI illumination. This is the first time photo-conductivity has been observed in FCVA deposited silicon