Fabrication of high power InGaAs/AlInGaAs strained SQW lasers on InGaAs ternary substrates

Author

Moore, A.H. ; Lent, B. ; Bonner, W.A.

Author_Institution

EG&G Optoelectron., Vaudreuil, Que., Canada

Volume

32

Issue

21

fYear

1996

fDate

10/10/1996 12:00:00 AM

Firstpage

2018

Lastpage

2019

Abstract

High quality In_0.03Ga_0.97As ternary substrates have been fabricated by the liquid encapsulated Czochralski (LEG) technique using a semi-infinite melt approach. Lasers using the AlInGaAs/InGaAs alloy system have been fabricated on the conducting substrates for the first time. Pulsed power of 16.2 W at 40 A have been recorded for devices emitting at 1.03 μm. Threshold current densities were 595 A cm^-2 and the characteristic temperatures were 100 K. These data demonstrate the commercial potential of ternary substrate manufacture

Keywords

III-V semiconductors; aluminium compounds; crystal growth from melt; gallium arsenide; gallium compounds; indium compounds; laser transitions; liquid phase epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; substrates; 1.035 micron; 16.2 W; 40 A; In_0.03Ga_0.97As; InGaAs ternary substrates; InGaAs-AlInGaAs; LEG technique; conducting substrates; fabrication; high power strained SQW lasers; liquid encapsulated Czochralski technique; semi-infinite melt approach;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19961350

Filename

542904