Title :
Model for carrier lifetime extraction from pseudo-MOSFET transients
Author :
Cristoloveanu, S. ; Elewa, T.
Author_Institution :
Lab. de Phys. des Composants a Semicond., CNRS, Grenoble, France
fDate :
10/10/1996 12:00:00 AM
Abstract :
The authors propose a pulsing technique for pseudo-MOS transistor, for the advanced characterisation of thin SOI films. The resulting drain current transient can easily be processed to extract the carrier generation lifetime in virgin SOI wafers. The theoretical model and the basic experimental conditions are described
Keywords :
MOSFET; carrier lifetime; semiconductor device models; silicon-on-insulator; transient analysis; Si; carrier lifetime extraction; drain current transient; pseudo-MOS transistor; pseudo-MOSFET transients; pulsing technique; theoretical model; thin SOI film characterisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961319
