DocumentCode :
1437465
Title :
Steam oxidation of GaAs
Author :
Oh, T.-H. ; Huffaker, D.L. ; Graham, L.A. ; Deng, H. ; Deppe, D.G.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Volume :
32
Issue :
21
fYear :
1996
fDate :
10/10/1996 12:00:00 AM
Firstpage :
2024
Lastpage :
2026
Abstract :
The steam oxidation of GaAs is characterised. In the temperature range 500-520°C the steam process forms a dense, smooth Gax Oy film characterised by a volume contraction of 5-10%. The oxidation process is readily masked by SiO2, and can therefore be applied selectively to a GaAs crystal surface
Keywords :
III-V semiconductors; gallium arsenide; oxidation; semiconductor technology; 500 to 520 C; GaAs; GaAs crystal surface; GaO-GaAs; SiO2; SiO2 masking; dense smooth GaxOy film; selective application; steam oxidation; volume contraction;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19961315
Filename :
542908
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1437465
بازگشت