• DocumentCode
    1437465
  • Title

    Steam oxidation of GaAs

  • Author

    Oh, T.-H. ; Huffaker, D.L. ; Graham, L.A. ; Deng, H. ; Deppe, D.G.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
  • Volume
    32
  • Issue
    21
  • fYear
    1996
  • fDate
    10/10/1996 12:00:00 AM
  • Firstpage
    2024
  • Lastpage
    2026
  • Abstract
    The steam oxidation of GaAs is characterised. In the temperature range 500-520°C the steam process forms a dense, smooth Gax Oy film characterised by a volume contraction of 5-10%. The oxidation process is readily masked by SiO2, and can therefore be applied selectively to a GaAs crystal surface
  • Keywords
    III-V semiconductors; gallium arsenide; oxidation; semiconductor technology; 500 to 520 C; GaAs; GaAs crystal surface; GaO-GaAs; SiO2; SiO2 masking; dense smooth GaxOy film; selective application; steam oxidation; volume contraction;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19961315
  • Filename
    542908
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1437465