Title :
Delay Analysis of Graphene Field-Effect Transistors
Author :
Wang, Han ; Hsu, Allen ; Lee, Dong Seup ; Kim, Ki Kang ; Kong, Jing ; Palacios, Tomas
Author_Institution :
Microsyst. Technol. Lab., Massachusetts Inst. of Technol., Cambridge, MA, USA
fDate :
3/1/2012 12:00:00 AM
Abstract :
In this letter, we analyze the carrier transit delay in graphene field-effect transistors (GFETs).The extraction of the intrinsic delay provides a new way to directly estimate carrier velocity from the experimental data, while the breakdown of the total delay into intrinsic, extrinsic, and parasitic components can offer valuable information for optimizing RF GFET structures.
Keywords :
delays; field effect transistors; graphene; C; RF GFET structure optimization; carrier transit delay analysis; carrier velocity estimation; delay breakdown; extrinsic component; graphene field-effect transistors; intrinsic component; intrinsic delay extraction; parasitic components; Capacitance; Delay; Logic gates; Radio frequency; Substrates; Transistors; Carrier velocity; chemical vapor deposition graphene; delay analysis; graphene FET (GFET); sapphire;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2180886
