Title :
Suppression of I-V kink in doped channel InAlAs/InGaAs/InP heterojunction field-effect transistor (HFET) using silicon nitride passivation
Author :
Wang, H. ; Ng, G.I. ; Gilbert, M. ; O´Sullivan, P.J.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fDate :
10/10/1996 12:00:00 AM
Abstract :
The impact of silicon nitride (SIN) surface passivation on the kink effect of doped channel InAlAs/InGaAs/InP HFETs has been investigated for the first time. Experiments show that the I-V kinks of these HFETs can be reduced significantly by using SiN surface passivation
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; passivation; surface states; vapour phase epitaxial growth; I-V kink suppression; InAlAs-InGaAs-InP; SiN; SiN surface passivation; doped channel HFET; field-effect transistor; heterojunction FET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19961333
