Title :
Fibre coupling to SiGe optoelectronic devices
Author :
Greedy, S.C. ; Arrand, H.F. ; Sewell, P.D. ; Benson, T.M.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nottingham Univ., UK
fDate :
12/1/2000 12:00:00 AM
Abstract :
Recent years have seen the rapid evolution of silicon-based optoelectronics. The absorption properties of Si1-xGex alloys make them excellent materials for the realisation of photodetectors operating at the near-infrared wavelengths of 1.3 and 1.55 μm which are important for fibre optic communication systems. An important design consideration for such systems is the efficient coupling of optical fibres to optoelectronic integrated circuits. A Si 1-xGex rib waveguide spot-size transformer is presented that performs two essential roles: the transformation of the large spot fibre to a small spot waveguide mode, and subsequently the transfer of the mode from a passive Si waveguiding region to an active Si1-xGex region where optical absorption may occur. This transformation is accomplished by the use of a tapered waveguide structure. An analysis technique based on the spectral index method is used to investigate the local modal behaviour of the structure and experimental results confirm its successful operation
Keywords :
Ge-Si alloys; light absorption; optical couplers; optical fibre couplers; optical waveguides; optoelectronic devices; photodetectors; rib waveguides; 1.3 mum; 1.55 mum; Si1-xGex alloys; Si1-xGex rib waveguide spot-size transformer; SiGe; SiGe optoelectronic devices; active Si1-xGex region; design consideration; efficient coupling; fibre coupling; fibre optic communication systems; local modal behaviour; near-infrared wavelengths; optical absorption; optical fibre coupling; optoelectronic integrated circuits; passive Si waveguiding region; photodetectors; silicon-based optoelectronics; spectral index method; tapered waveguide structure;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20000867
