A new MOSFET with large-tilt-angle implanted drain (LATID) structure

Author

Hori, Takashi ; Kurimoto, Kazumi

Author_Institution

Matsushita Electr. Ind. Co. Ltd., Osaka, Japan

Volume

9

Issue

6

fYear

1988

fDate

6/1/1988 12:00:00 AM

Firstpage

300

Lastpage

302

Abstract

The LATID device features the elimination of the sidewall spacer and self-alignment of n/sup -/ large tilt angle (LAT) and n/sup +/ implants to the same gate edge. Even without a spacer and a heavy drive-in, the LATID can achieve both a sufficiently long L/sub n-/ and an n/sup +/ gate overlap. The LATID achieves improved current drive by more than 50% and improved hot-carrier lifetime by more than three orders of magnitude as compared with a conventional lightly doped drain. The LATID technique is most promising for applications to submicrometer ULSI under 5-V operation.<>

Keywords

VLSI; field effect integrated circuits; insulated gate field effect transistors; integrated circuit technology; ion implantation; semiconductor technology; 5 V; 5-V operation; LATID device; current drive; features; gate overlap; hot-carrier lifetime; large-tilt-angle implanted drain; self-alignment; sidewall spacer elimination; submicrometer ULSI; CMOS technology; Etching; Fabrication; Hot carrier effects; Hot carriers; Implants; MOSFET circuits; Rapid thermal processing; Substrates; Thermal degradation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.723

Filename

723