Title :
A new MOSFET with large-tilt-angle implanted drain (LATID) structure
Author :
Hori, Takashi ; Kurimoto, Kazumi
Author_Institution :
Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
fDate :
6/1/1988 12:00:00 AM
Abstract :
The LATID device features the elimination of the sidewall spacer and self-alignment of n/sup -/ large tilt angle (LAT) and n/sup +/ implants to the same gate edge. Even without a spacer and a heavy drive-in, the LATID can achieve both a sufficiently long L/sub n-/ and an n/sup +/ gate overlap. The LATID achieves improved current drive by more than 50% and improved hot-carrier lifetime by more than three orders of magnitude as compared with a conventional lightly doped drain. The LATID technique is most promising for applications to submicrometer ULSI under 5-V operation.<>
Keywords :
VLSI; field effect integrated circuits; insulated gate field effect transistors; integrated circuit technology; ion implantation; semiconductor technology; 5 V; 5-V operation; LATID device; current drive; features; gate overlap; hot-carrier lifetime; large-tilt-angle implanted drain; self-alignment; sidewall spacer elimination; submicrometer ULSI; CMOS technology; Etching; Fabrication; Hot carrier effects; Hot carriers; Implants; MOSFET circuits; Rapid thermal processing; Substrates; Thermal degradation;
Journal_Title :
Electron Device Letters, IEEE
