DocumentCode :
1437729
Title :
A New Stress Migration Failure Mode in Highly Scaled Cu/Low- 
Interconnects
Author :
Lee, Chang-Chun ; Oates, Anthony S.
Author_Institution :
Dept. of Mech. Eng., Chung Yuan Christian Univ., Chungli, Taiwan
Volume :
12
Issue :
2
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
529
Lastpage :
531
Abstract :
We identify a new stress migration (SM) failure mode in Cu/low-k interconnects whereby voids are formed in very narrow trenches close to large Cu plates. Finite-element analysis shows that the new failure mode is generated by large stress gradients associated with geometry changes in highly scaled Cu interconnects. This work indicates that management of mechanical stresses will be an important issue for future development of reliable Cu/low- k interconnects.
Keywords :
finite element analysis; gradient methods; integrated circuit interconnections; integrated circuit reliability; finite-element analysis; highly scaled copper-low-k interconnects; mechanical stress management; stress gradients; stress migration failure mode; Copper; Kelvin; Materials; Periodic structures; Reliability; Resistance; Stress; Cu; interconnect; low-$k$
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2012.2185497
Filename :
6144722
Link To Document :
