Title :
Integrated amplifiers using fully ion-implanted InP JFETs with high transconductance
Author :
Kim, Sung J. ; Guth, G. ; Vella-Coleiro, G.P.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
6/1/1988 12:00:00 AM
Abstract :
Monolithically integrated amplifiers have been fabricated using JFETs with a gate length of 1.5 mu m and a maximum transconductance of 110 mS/mm, the highest ever reported for ion-implanted InP JFETs. The amplifiers utilized both a conventional direct-coupled design and a new symmetrical design. The conventional direct-coupled amplifier shows a maximum gain of 8 (18 dB) while the symmetrical amplifier design exhibits the same gain without DC offset regardless of the FET threshold voltage and the power supply voltage used.<>
Keywords :
III-V semiconductors; field effect integrated circuits; indium compounds; junction gate field effect transistors; microwave amplifiers; solid-state microwave circuits; 1.5 micron; 18 dB; DC offset; InP; direct-coupled amplifier; direct-coupled design; gain; gate length; ion implantation; ion-implanted InP JFETs; monolithic integrated amplifiers; semiconductors; symmetrical amplifier design; symmetrical design; transconductance; Doping; Electron mobility; FETs; Indium phosphide; Insulation; JFETs; Optical amplifiers; Power amplifiers; Threshold voltage; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
