DocumentCode :
1437972
Title :
Dielectric small-signal response by protons in amorphous insulators
Author :
Kliem, H.
Author_Institution :
Inst. fuer Werkstoffe der Elektrotech., Aachen Univ. of Technol., West Germany
Volume :
24
Issue :
2
fYear :
1989
fDate :
4/1/1989 12:00:00 AM
Firstpage :
185
Lastpage :
197
Abstract :
A model is proposed in which protons fluctuate between neighboring atomic shells either by thermal activation or by a tunneling process. The transition probability of the protons depends on the distance between the adjacent atoms. The characteristic pair distribution function of interatomic distances in the amorphous state is a consequence of locally minimizing the potential energy of the atoms during condensation, as has been shown by F.F. Abraham (1980). This general principle of minimizing the energy leads to similar distribution functions in different materials. Therefore, different types of insulators have a similar relaxational behavior. Experiments carried out with thin films of aluminum oxide and polyimide confirm quantitatively the proposed model
Keywords :
alumina; dielectric thin films; electrical conductivity of amorphous semiconductors and insulators; electronic conduction in insulating thin films; organic insulating materials; polymer films; Al2O3 thin films; alumina; amorphous insulators; dielectric small signal response by protons; distribution functions; interatomic distances; model; polyimide; proton fluctuate between atoms; thermal activation; tunneling process; Aluminum oxide; Amorphous materials; Dielectrics and electrical insulation; Distribution functions; Frequency domain analysis; Hydrogen; Polarization; Polyimides; Protons; Silicon;
fLanguage :
English
Journal_Title :
Electrical Insulation, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9367
Type :
jour
DOI :
10.1109/14.90270
Filename :
90270
Link To Document :
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