Title :
Simulation of pixel voltage error for a-Si TFT LCD regarding the change in LC pixel capacitance
Author :
Zhu, Yongfu ; Li, Muju ; Yuan, Jianfeng ; Liu, Chuanzhen ; Yang, Bailiang ; Shen, Dezhen
Author_Institution :
Lab. of Excited State Process, Acad. Sinica, Changchun, China
fDate :
2/1/2001 12:00:00 AM
Abstract :
LC pixel capacitance Clc, which changes with the director of liquid crystal molecules as a function of external applied voltage, has a most important impact on the pixel voltage error Δ Vp and therefore on the electro-optics (E-O) characteristics of the LC pixel for an a-Si TFT LCD. In this paper, the pixel voltage error has been simulated for 10.4" VGA (640×480) and SVGA (800×600) a-Si TFT LCD, and in this simulation, we especially took into account the change in LC dielectric constant. We found that Δ Vp changes with the data voltage Vp. In addition, E-O characteristics of LC pixel for an a-Si TFT LCD has been investigated. The result shows that the effect of Δ Vp on E-O characteristics is significant when Vp ranges from the threshold voltage to the saturation voltage
Keywords :
amorphous semiconductors; capacitance; electric potential; elemental semiconductors; errors; liquid crystal displays; permittivity; thin film transistors; 10.4 in; 480 pixel; 600 pixel; 640 pixel; 800 pixel; LC pixel capacitance; Si; VGA; a-Si TFT LCD; dielectric constant; electro-optics characteristics; external applied voltage; liquid crystal display; pixel voltage error simulation; saturation voltage; threshold voltage; Capacitance; Capacitance-voltage characteristics; Capacitors; Dielectric constant; Electrodes; Equivalent circuits; Liquid crystal displays; Liquid crystals; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
