Capacitance Characteristics Improvement and Power Enhancement for RF LDMOS Transistors Using Annular Layout Structure

Author

Chiu, Chia-Sung ; Chen, Kun-Ming ; Huang, Guo-Wei ; Chen, Ming-I ; Yang, Yu-Chi ; Wang, Kai-Li

Author_Institution

Nat. Nano Device Labs., Hsinchu, Taiwan

Volume

59

Issue

3

fYear

2011

fDate

3/1/2011 12:00:00 AM

Firstpage

638

Lastpage

643

Abstract

This paper presents an annular-structure lateral-diffused metal-oxide-semiconductor (LDMOS) RF transistor using a 0.5-μm LDMOS process. This paper also examines the dc, small-signal, and large-signal characteristics of RF LDMOS transistors with different closed structures. In particular, the problem of evaluating the LDMOS aspect ratio for annular structure is addressed. The capacitance characteristics improvement in the LDMOS device design using the annular structure was also investigated. The power gain and efficiency of annular structure give nearly 5% enhancement compared to the traditional structure with 80-μm gatewidth at 1.9 GHz. Results show that the annular structure appears to be a better layout design for RF LDMOS transistors.

Keywords

MOSFET; UHF field effect transistors; LDMOS device design; RF LDMOS transistors; annular layout structure; annular-structure lateral-diffused metal-oxide-semiconductor RF transistor; capacitance characteristics; frequency 1.9 GHz; power efficiency; power enhancement; power gain; size 0.5 mum; size 80 mum; Capacitance; Gain; Layout; Logic gates; Performance evaluation; Radio frequency; Transistors; $X$-parameters; Annular structure; lateral-diffused metal–oxide–semiconductor (LDMOS) transistor; power; power-added efficiency (PAE);

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/TMTT.2010.2103215

Filename

5704225