Title :
An accurate Coulomb mobility model for MOS inversion layer and its application to NO-oxynitride devices
Author :
Kondo, Masaki ; Tanimoto, Hiroyoshi
Author_Institution :
Syst. LSI Div., Toshiba Corp., Yokohama, Japan
fDate :
2/1/2001 12:00:00 AM
Abstract :
In this paper, a new mobility model for device simulation is presented that incorporates Coulomb scattering due to ionized impurities in the MOS inversion layer. It is well known that the Coulomb scattering strongly depends on carrier concentration because of the screening effect. A crucial technique is used in the modeling procedure, with which a local dependency of the mobility on carrier concentration is derived from the experimental data of the effective mobility. Consequently, the present model has the ability to reproduce the experimental effective mobility over a wide range of impurity concentration with a single parameter set. Comparisons of the simulated and measured IDS-VGS curves show good agreement for 0.15 μm CMOS devices having pure SiO2 and NO-based oxynitride gate oxides
Keywords :
MOSFET; carrier density; carrier mobility; impurity scattering; inversion layers; semiconductor device models; 0.15 micron; CMOS devices; Coulomb mobility model; Coulomb scattering; I-V characteristics; IDS-VGS curves; MOS inversion layer; NO-based oxynitride gate oxides; NO-oxynitride devices; SiNO; SiO2; SiO2 gate oxides; carrier concentration; device simulation; effective mobility; ionized impurities; local dependency; modeling procedure; screening effect; Impurities; Large scale integration; MOS devices; Phonons; Predictive models; Rough surfaces; Scattering; Semiconductor device modeling; Semiconductor process modeling; Surface roughness;
Journal_Title :
Electron Devices, IEEE Transactions on
