Quantum device-simulation with the density-gradient model on unstructured grids

Author

Wettstein, Andreas ; Schenk, Andreas ; Fichtner, Wolfgang

Author_Institution

Inst. fur Integrierte Syst., Swiss Federal Inst. of Technol., Zurich, Switzerland

Volume

48

Issue

2

fYear

2001

fDate

2/1/2001 12:00:00 AM

Firstpage

279

Lastpage

284

Abstract

We describe an implementation of the density-gradient device equations which is simple and works in any dimension without imposing additional requirements on the mesh compared to classical simulations. It is therefore applicable to real-world device simulation with complex geometries. We use our implementation to determine the quantum mechanical effects for a MOS-diode, a MOSFET and a double-gated SOI MOSFET. The results are compared to those obtained by a 1D-Schrodinger-Poisson solver. We also investigate a simplified variant of the density-gradient term and show that, while it can reproduce terminal characteristics, it does not give the correct density distribution inside the device

Keywords

MOSFET; semiconductor device models; semiconductor diodes; silicon-on-insulator; MOS-diode; MOSFET; complex geometries; density-gradient device equations; density-gradient model; double-gated SOI MOSFET; internal density distribution; quantum device-simulation; quantum mechanical effects; terminal characteristics; unstructured grids; Geometry; Hydrodynamics; MOSFET circuits; Maxwell equations; Multidimensional systems; Quantum mechanics; Schrodinger equation; Solid modeling; Threshold voltage; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.902727

Filename

902727