Title :
A three-terminal SOI gated varactor for RF applications
Author :
Shen, Keqiang ; Hui, Frankie Ping Shing ; Wong, Wallace Ming Yip ; Chen, Zhiheng ; Lau, Jack ; Chan, Philip C.H. ; Ko, Ping K.
Author_Institution :
Hong Kong Univ. of Sci. & Technol., Kowloon, Hong Kong
fDate :
2/1/2001 12:00:00 AM
Abstract :
This paper presents a new CMOS compatible SOI gated varactor for use in RF ICs. With its additional third terminal, the device offers an exceptional large tuning range and a good quality factor. The result of the MEDICI simulation of the structure of the varactor has been confirmed with measured data. A VCO circuit that can potentially exploit the three-terminal property is also reported
Keywords :
CMOS integrated circuits; Q-factor; UHF diodes; UHF integrated circuits; UHF oscillators; circuit tuning; silicon-on-insulator; varactors; voltage-controlled oscillators; 1 GHz; CMOS compatible varactor; MEDICI simulation; RF ICs; RF applications; Si; VCO circuit; large tuning range; quality factor; three-terminal SOI gated varactor; three-terminal property; CMOS process; Capacitance; Circuit simulation; Diodes; Lifting equipment; Q factor; Radio frequency; Tuning; Varactors; Voltage-controlled oscillators;
Journal_Title :
Electron Devices, IEEE Transactions on
