Title :
Two-dimensional simulation of ferroelectric memory cells
Author :
Dragosits, Klaus ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Austria
fDate :
2/1/2001 12:00:00 AM
Abstract :
An approach to increase the capabilities of integrated circuit nonvolatile memory is to take advantage of the hysteresis in the polarization of ferroelectric materials. For a rigorous analysis of the resulting devices, a suitable model for the ferroelectric effects has been developed. We present this model and show the results of its implementation into a device simulator. Although this model was designed especially for analysis of ferroelectric materials, it is also applicable to magnetic hysteresis phenomena
Keywords :
dielectric hysteresis; ferroelectric storage; ferroelectric memory cell; integrated circuit; nonvolatile memory; polarization hysteresis; two-dimensional simulation; Circuit simulation; Ferroelectric devices; Ferroelectric materials; Fingers; Geometry; Magnetic analysis; Magnetic hysteresis; Magnetic materials; Nonvolatile memory; Polarization;
Journal_Title :
Electron Devices, IEEE Transactions on
