Nonstationary electron/hole transport in sub-0.1 μm MOS devices: correlation with mobility and low-power CMOS application

We have experimentally studied the high-lateral-field carrier velocity near the source edge in sub-0.1 μm MOSFETs. It is demonstrated that the high-field electron velocity and hole velocity have universal low-field mobility dependence. This shows that the hole velocity is lower than the electron velocity due to the hole´s lower mobility. Moreover, we have investigated the low-power CMOS operation using the velocity overshoot. It is verified that there is a most suitable supply voltage for improving the CMOS operation using velocity overshoot. The most suitable supply voltage is shown to be about 1 V. Therefore, the velocity overshoot will be very useful for low voltage CMOS operation in the future