Title :
The pseudo-two-dimensional approach to model the drain section in SOI MOSFETs
Author :
Hammad, M. Youssef ; Schroder, Dieter K.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
fDate :
2/1/2001 12:00:00 AM
Abstract :
The pseudo-two-dimensional (2-D) approach is extended from traditional bulk-Si devices to silicon-on-insulator (SOI) ones. All the possible scenarios associated with partially- and fully-depleted devices are included in the analysis. The benefits of the pseudo-2-D approach in saturation-region modeling are briefly discussed
Keywords :
MOSFET; semiconductor device models; silicon-on-insulator; Gaussian box; SOI MOSFETs; drain section modeling; fully-depleted devices; partially-depleted devices; pseudo-two-dimensional approach; saturation-region modeling; Analytical models; Electronics industry; Electrons; Instruments; Low power electronics; MOSFETs; Microelectronics; Semiconductor films; Silicon on insulator technology; US Department of Commerce;
Journal_Title :
Electron Devices, IEEE Transactions on
