Title :
InP/InGaAs double-heterojunction bipolar transistors for high-speed optical receivers
Author :
Sano, Eiichi ; Yoneyama, Mikio ; Yamahata, Shoji ; Matsuoka, Yutaka
Author_Institution :
NTT LSI Labs., Atsugi, Japan
fDate :
11/1/1996 12:00:00 AM
Abstract :
We fabricated monolithically integrated pin/HBT photoreceivers using FPIGA (full-potential InGaAs) DHBT´s with various collector thicknesses. An HBT figure-of-merit was deduced from the relationship between measured bandwidths of the preamplifiers and the fT´s and fmax´s of the DHBT´s. A phenomenological device model of the DHBT´s is proposed to find the optimum collector thickness that gives the highest bandwidth of the photoreceivers. Finally, we discuss the feasibility of monolithically integrating a pin-PD, preamplifier, buffer amplifier, and D-type flip-flop with an operating speed of 40 Gbit/s
Keywords :
III-V semiconductors; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; preamplifiers; semiconductor device models; 40 Gbit/s; 6 to 70 GHz; D-type flip-flop; FPIGA DHBT; HBT figure-of-merit; InP-InGaAs; InP/InGaAs double-heterojunction bipolar transistors; buffer amplifier; collector thickness; fT; fmax; full-potential InGaAs; high-speed optical receivers; monolithically integrated pin/HBT photoreceivers; operating speed; phenomenological device model; photoreceiver bandwidth; preamplifier bandwidth; Bandwidth; Bipolar transistors; DH-HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical amplifiers; Optical receivers; Preamplifiers; Radio frequency;
Journal_Title :
Electron Devices, IEEE Transactions on
