Measurement of the BJT activation current during the reverse recovery of power MOSFET´s drain-source diode

Author

Iannuzzo, Francesco ; Persiano, Giovanni Vito ; Busatto, Giovanni

Author_Institution

Dipartimento di Ingegneria Elettronica, Naples Univ., Italy

Volume

48

Issue

2

fYear

2001

fDate

2/1/2001 12:00:00 AM

Firstpage

391

Lastpage

393

Abstract

A new and simple method to measure the activation current of the parasitic BJT in the drain-source MOSFET´s diode is presented. Based on the evaluation of the stored charge at supply voltages lower than the maximum reverse voltage of the device, accurate and safe measurements have been performed at forward current levels up to the MOSFET´s maximum current rating

Keywords

bipolar transistors; electric current measurement; power MOSFET; power semiconductor diodes; semiconductor device breakdown; semiconductor device measurement; semiconductor device reliability; MOSFET maximum current rating; accurate safe measurements; activation current measurement; forward current levels; freewheeling devices; maximum reverse voltage; parasitic BJT activation current; power MOSFET drain-source diode; reverse recovery; stored charge; Charge measurement; Circuit topology; Current measurement; MOSFET circuits; Performance evaluation; Power measurement; Semiconductor device breakdown; Semiconductor diodes; Switches; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.902744

Filename

902744