Title :
Measurement of the BJT activation current during the reverse recovery of power MOSFET´s drain-source diode
Author :
Iannuzzo, Francesco ; Persiano, Giovanni Vito ; Busatto, Giovanni
Author_Institution :
Dipartimento di Ingegneria Elettronica, Naples Univ., Italy
fDate :
2/1/2001 12:00:00 AM
Abstract :
A new and simple method to measure the activation current of the parasitic BJT in the drain-source MOSFET´s diode is presented. Based on the evaluation of the stored charge at supply voltages lower than the maximum reverse voltage of the device, accurate and safe measurements have been performed at forward current levels up to the MOSFET´s maximum current rating
Keywords :
bipolar transistors; electric current measurement; power MOSFET; power semiconductor diodes; semiconductor device breakdown; semiconductor device measurement; semiconductor device reliability; MOSFET maximum current rating; accurate safe measurements; activation current measurement; forward current levels; freewheeling devices; maximum reverse voltage; parasitic BJT activation current; power MOSFET drain-source diode; reverse recovery; stored charge; Charge measurement; Circuit topology; Current measurement; MOSFET circuits; Performance evaluation; Power measurement; Semiconductor device breakdown; Semiconductor diodes; Switches; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
