Title :
Small-signal substrate resistance effect in RF CMOS identified through device simulations
Author :
Hjelmgren, Hans ; Litwin, Andrej
Author_Institution :
Ericsson Microelectron. AB, Stockholm, Sweden
fDate :
2/1/2001 12:00:00 AM
Abstract :
An anomalous dip in the measured s22 characteristic, as well as a decrease in the output resistance, of MOS devices for rf applications was found to be a pure ac effect caused by the small-signal substrate transconductance. The study of the ac characteristics of multifinger transistors in rf applications with a high-resistivity substrate also puts a question mark on the possibility of achieving fully scalable models, considering the observed ac substrate effect
Keywords :
CMOS integrated circuits; MOSFET; S-parameters; SPICE; contact resistance; microwave field effect transistors; semiconductor device models; 200 MHz to 10 GHz; MOS devices; RF CMOS; SPICE; ac characteristics; ac substrate effect; anomalous dip; body resistance; device simulations; fully scalable models; high-resistivity substrate; multifinger transistors; output resistance; s22 characteristic; small-signal substrate resistance effect; small-signal substrate transconductance; CMOS technology; Conductivity; Contact resistance; Electrical resistance measurement; Immune system; MOSFETs; Radio frequency; Radiofrequency identification; Strips; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
