Small-signal substrate resistance effect in RF CMOS identified through device simulations

Author

Hjelmgren, Hans ; Litwin, Andrej

Author_Institution

Ericsson Microelectron. AB, Stockholm, Sweden

Volume

48

Issue

2

fYear

2001

fDate

2/1/2001 12:00:00 AM

Firstpage

397

Lastpage

399

Abstract

An anomalous dip in the measured s₂₂ characteristic, as well as a decrease in the output resistance, of MOS devices for rf applications was found to be a pure ac effect caused by the small-signal substrate transconductance. The study of the ac characteristics of multifinger transistors in rf applications with a high-resistivity substrate also puts a question mark on the possibility of achieving fully scalable models, considering the observed ac substrate effect

Keywords

CMOS integrated circuits; MOSFET; S-parameters; SPICE; contact resistance; microwave field effect transistors; semiconductor device models; 200 MHz to 10 GHz; MOS devices; RF CMOS; SPICE; ac characteristics; ac substrate effect; anomalous dip; body resistance; device simulations; fully scalable models; high-resistivity substrate; multifinger transistors; output resistance; s₂₂ characteristic; small-signal substrate resistance effect; small-signal substrate transconductance; CMOS technology; Conductivity; Contact resistance; Electrical resistance measurement; Immune system; MOSFETs; Radio frequency; Radiofrequency identification; Strips; Substrates;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.902747

Filename

902747