Title :
Modeling of optoelectronic switch with PIN photodiode and GaAs MESFET transmission gate
Author :
Liu, Qing Z. ; MacDonald, R. Ian
Author_Institution :
Telecommun. Res. Lab., Edmonton, Alta., Canada
fDate :
11/1/1996 12:00:00 AM
Abstract :
A broadband and high-isolation optoelectronic switch, which consists of a PIN photodiode and a GaAs MESFET in common gate configuration as a transmission gate, was theoretically and experimentally investigated. An analytical model has been developed to calculate the isolation level of the switch. The influences on the isolation level from different device parameters were studied. Experimental results obtained using commercial components validate the operation of the proposed switch. Measured isolation of 70 dB at 300 kHz and 55 dB up to 1.0 GHz were achieved. Good agreement has been obtained between the measured and calculated results and therefore the model developed has been validated
Keywords :
Schottky gate field effect transistors; equivalent circuits; field effect transistor switches; gallium arsenide; p-i-n photodiodes; photoconducting switches; semiconductor device models; 300 kHz to 1 GHz; GaAs; GaAs MESFET transmission gate; PIN photodiode; analytical model; broadband switch; common gate configuration; equivalent circuit; isolation level; optoelectronic switch modeling; Detectors; Gallium arsenide; Impedance; MESFETs; Optical crosstalk; Optical filters; Optical switches; PIN photodiodes; Switching circuits; Telecommunication switching;
Journal_Title :
Electron Devices, IEEE Transactions on
