Transit-time limited high-frequency response characteristics of MSM photodetectors

Author

Chen, Jau-Wen ; Kim, Dae-Kaen ; Das, Mukunda B.

Author_Institution

Center for Electron. Mater. & Process., Pennsylvania State Univ., University Park, PA, USA

Volume

43

Issue

11

fYear

1996

fDate

11/1/1996 12:00:00 AM

Firstpage

1838

Lastpage

1843

Abstract

A simplified, but useful, one-dimensional transit-time limited frequency domain current response model of MSM photodetectors is presented. The model includes the effects of unequal velocities and lifetimes governing the lateral transport of photogenerated holes and electrons in the absorption layer. Normalized frequency response curves depicting the amplitude and phase versus the frequency are presented using the transit-time ratio as a parameter. The usefulness of the analytical response amplitude curves for the extraction of hole and electron transit times has been demonstrated by regressively fitting them with the measured results obtained from practical MSM photodetectors

Keywords

III-V semiconductors; carrier lifetime; carrier mobility; frequency response; frequency-domain analysis; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; semiconductor device models; InGaAs-InP; MSM photodetectors; absorption layer; electron transit times; high speed optoelectronics; hole transit times; lateral transport; normalized frequency response curves; one-dimensional transit-time limited frequency domain current response model; photogenerated electrons; photogenerated holes; transit-time limited high-frequency response characteristics; Absorption; Charge carrier processes; Frequency domain analysis; Frequency response; Gallium arsenide; Indium compounds; Indium gallium arsenide; Indium phosphide; PIN photodiodes; Photodetectors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.543016

Filename

543016