Title :
Transit-time limited high-frequency response characteristics of MSM photodetectors
Author :
Chen, Jau-Wen ; Kim, Dae-Kaen ; Das, Mukunda B.
Author_Institution :
Center for Electron. Mater. & Process., Pennsylvania State Univ., University Park, PA, USA
fDate :
11/1/1996 12:00:00 AM
Abstract :
A simplified, but useful, one-dimensional transit-time limited frequency domain current response model of MSM photodetectors is presented. The model includes the effects of unequal velocities and lifetimes governing the lateral transport of photogenerated holes and electrons in the absorption layer. Normalized frequency response curves depicting the amplitude and phase versus the frequency are presented using the transit-time ratio as a parameter. The usefulness of the analytical response amplitude curves for the extraction of hole and electron transit times has been demonstrated by regressively fitting them with the measured results obtained from practical MSM photodetectors
Keywords :
III-V semiconductors; carrier lifetime; carrier mobility; frequency response; frequency-domain analysis; gallium arsenide; indium compounds; metal-semiconductor-metal structures; photodetectors; semiconductor device models; InGaAs-InP; MSM photodetectors; absorption layer; electron transit times; high speed optoelectronics; hole transit times; lateral transport; normalized frequency response curves; one-dimensional transit-time limited frequency domain current response model; photogenerated electrons; photogenerated holes; transit-time limited high-frequency response characteristics; Absorption; Charge carrier processes; Frequency domain analysis; Frequency response; Gallium arsenide; Indium compounds; Indium gallium arsenide; Indium phosphide; PIN photodiodes; Photodetectors;
Journal_Title :
Electron Devices, IEEE Transactions on
