Title :
Lateral carrier domain magnetometer in SOI technology
Author :
Lau, Jack ; Nguyen, Cuong T. ; Ko, Ping K. ; Chan, Philip C.H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong
fDate :
11/1/1996 12:00:00 AM
Abstract :
We report here a lateral magnetometer based on the carrier domain effect. For the ease of integration, silicon-based magnetic sensors are often researched. The Vertical Carrier Domain Magnetometer (VCDM), reported some time ago, achieves a high sensitivity based on carrier domain effects and on internal positive feedback. Unfortunately, the VCDM is not practical. We report here a Lateral Carrier Domain Magnetometer built on SOI that solves the problems faced by the VCDM. MEDICI simulation shows the formation of a carrier domain. We fabricated the device using a 6-mask process on a BESOI wafer. The device is probed on wafer with a specially made magnetic chuck that can generate up to 200 Gauss. The LCDM achieves a relative sensitivity of 12.5%/Tesla
Keywords :
bipolar transistors; magnetic sensors; magnetometers; photolithography; silicon-on-insulator; 0 to 200 G; 6-mask process; BESOI wafer; MEDICI simulation; NPN transistors; PNP transistors; SOI technology; Si-based magnetic sensors; carrier domain effect; lateral carrier domain magnetometer; lateral magnetometer; magnetic chuck; on wafer probing; relative sensitivity; Feedback; Hard disks; Lifting equipment; Magnetic field measurement; Magnetic heads; Magnetic materials; Magnetic sensors; Magnetometers; Medical simulation; Region 2;
Journal_Title :
Electron Devices, IEEE Transactions on
