Title :
Drain current enhancement due to velocity overshoot effects and its analytic modeling
Author :
Song, Jai-Hyuk ; Park, Young-June ; Min, Hong-Shick
Author_Institution :
Semicond. Res. & Dev. Sector, Samsung Electron. Corp., Kyungki-Do, South Korea
fDate :
11/1/1996 12:00:00 AM
Abstract :
The drain current enhancement due to the velocity overshoot effects is found to be due to the electron velocity enhancement at the source end. Based on this observation, a new analytic model is proposed and verified by two-dimensional (2-D) simulations and experiments. From the results of the verifications, we conclude that our model predicts the drain current enhancement due to the velocity overshoot effects reasonably well. The effects of the device parameters, such as gate oxide thickness and channel doping concentration, on the drain current enhancement ran be readily found in our model
Keywords :
MOSFET; semiconductor device models; MOSFET; analytic model; channel doping concentration; drain current enhancement; electron velocity overshoot; gate oxide thickness; two-dimensional simulation; Analytical models; Artificial intelligence; Doping; Electrons; MOS devices; MOSFET circuits; Predictive models; Semiconductor process modeling; Temperature; Two dimensional displays;
Journal_Title :
Electron Devices, IEEE Transactions on
