Drain current enhancement due to velocity overshoot effects and its analytic modeling

Author

Song, Jai-Hyuk ; Park, Young-June ; Min, Hong-Shick

Author_Institution

Semicond. Res. & Dev. Sector, Samsung Electron. Corp., Kyungki-Do, South Korea

Volume

43

Issue

11

fYear

1996

fDate

11/1/1996 12:00:00 AM

Firstpage

1870

Lastpage

1875

Abstract

The drain current enhancement due to the velocity overshoot effects is found to be due to the electron velocity enhancement at the source end. Based on this observation, a new analytic model is proposed and verified by two-dimensional (2-D) simulations and experiments. From the results of the verifications, we conclude that our model predicts the drain current enhancement due to the velocity overshoot effects reasonably well. The effects of the device parameters, such as gate oxide thickness and channel doping concentration, on the drain current enhancement ran be readily found in our model

Keywords

MOSFET; semiconductor device models; MOSFET; analytic model; channel doping concentration; drain current enhancement; electron velocity overshoot; gate oxide thickness; two-dimensional simulation; Analytical models; Artificial intelligence; Doping; Electrons; MOS devices; MOSFET circuits; Predictive models; Semiconductor process modeling; Temperature; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.543021

Filename

543021