Title :
A novel technique of N2O-treatment on NH3-nitrided oxide as gate dielectric for nMOS transistors
Author :
Zeng, Xu ; Lai, P.T. ; Ng, W.T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Hong Kong
fDate :
11/1/1996 12:00:00 AM
Abstract :
A novel technique of N2O treatment on NH3-nitrided oxide is used to prepare thin gate oxide. Experiments on MOS capacitors and nMOSFET´s with this kind of gate dielectric show that N2O treatment is superior to conventional reoxidation step in suppressing both electron and hole trappings and interface trap creation under high-field stress. Interface hardness against hot-carrier bombardment and neutral electron trap generation are also improved. Thus, N2O treatment on NH3 -nitrided oxide shows excellent electrical and reliability properties, while maintaining sufficiently high nitrogen concentration in gate oxide which offers good resistance to dopant penetration
Keywords :
MOS capacitors; MOSFET; dielectric thin films; electron traps; hole traps; hot carriers; oxidation; semiconductor device reliability; semiconductor technology; MOS capacitors; N2O; dopant penetration; electron trapping; gate dielectric; high-field stress; hole trapping; hot-carrier bombardment; interface trap creation; nMOS transistors; neutral electron trap generation; reliability properties; Charge carrier processes; Dielectrics; Electric resistance; Electron traps; Hot carriers; MOS capacitors; MOSFET circuits; Maintenance; Nitrogen; Stress;
Journal_Title :
Electron Devices, IEEE Transactions on
