Thermal noise modeling for short-channel MOSFETs

Author

Triantis, Dimitris P. ; Birbas, Alexios N. ; Kondis, D.

Author_Institution

Dept. of Electr. Eng., Patras Univ., Greece

Volume

43

Issue

11

fYear

1996

fDate

11/1/1996 12:00:00 AM

Firstpage

1950

Lastpage

1955

Abstract

An analytical formulation of the thermal noise in short-channel MOSFETs, working in the saturation region, is presented. For the noise calculation, we took into account effects like the field dependent noise temperature and mobility, the device geometry and the channel length modulation, the back gate effect and the velocity saturation. The derived data from the model are in good agreement with reported thermal noise measurements, regarding the noise bias dependence, for transistors with channel lengths shorter than 1 μm. Since the present thermal noise models of MOS transistors are valid for channel lengths well above 1 μm, the proposed model can be easily incorporated in circuit simulators like SPICE, providing an extension to the analytical thermal noise modeling suitable for submicron MOSFETs

Keywords

MOSFET; carrier mobility; semiconductor device models; semiconductor device noise; thermal noise; MOS transistors; SPICE; analytical formulation; back gate effect; channel length modulation; circuit simulators; device geometry; drain current; field dependent mobility; field dependent noise temperature; noise bias dependence; saturation region; short-channel MOSFET; thermal noise modeling; velocity saturation; Analytical models; CMOS technology; Circuit noise; Circuit simulation; Geometry; Integrated circuit noise; MOSFET circuits; Noise measurement; Predictive models; Temperature dependence;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.543032

Filename

543032