DocumentCode :
1438330
Title :
A model for SIMOX buried-oxide high-field conduction
Author :
Krska, Jee-Hoon Y. ; Yoon, Jung U. ; Nee, Jocelyn T. ; Roitman, Peter ; Campisi, George J. ; Brown, George A. ; Chung, James E.
Author_Institution :
MIT, Cambridge, MA, USA
Volume :
43
Issue :
11
fYear :
1996
fDate :
11/1/1996 12:00:00 AM
Firstpage :
1956
Lastpage :
1964
Abstract :
A new model for SIMOX buried-oxide (BOX) high-field conduction which incorporates the role of silicon islands and BOX nonstoichiometry is presented. For single-implant SIMOX BOX high-field conduction, the onset E-field for both positive and negative applied bias is much lower than the expected onset E-field for that of thermal oxide. In addition, the onset E-field for injection from the substrate is lower than for injection from the top-silicon. We propose that conduction by electron injection from the top interface is due to Fowler-Nordheim tunneling with oxide nonstoichiometry induced modification of the effective barrier-height. Conduction by electron injection from the bottom interface is due to a two-step Fowler-Nordheim tunneling mechanism with cathode E-field enhancement caused by the presence of silicon islands located near the oxide-substrate interface of single-implant SIMOX. These mechanisms were verified using numerical simulation, electrical, and physical measurements. A modified Fowler-Nordheim equation can be used to model BOX conduction through the addition of three parameters, k e, ka, and oBOX. The E-field enhancement factors (ke and k,a) can be directly correlated to silicon island shape, location and density, while the effective barrier-height (oBOX) can be correlated to BOX nonstoichiometry. Monitoring these parameters has potential use as a simple method for SIMOX BOX quality control
Keywords :
MOS capacitors; SIMOX; annealing; buried layers; high field effects; ion implantation; semiconductor device models; tunnelling; BOX nonstoichiometry; Fowler-Nordheim tunneling; MOS capacitors; SIMOX BOX quality control; SIMOX buried-oxide high-field conduction; Si islands; SiO2-Si; cathode electric field enhancement; effective barrier-height; electrical measurements; electron injection; model; negative polarity conduction; numerical simulation; onset electric field; oxide nonstoichiometry induced modification; oxide-substrate interface; physical measurements; positive polarity conduction; single-implant SIMOX; temperature dependence; Cathodes; Condition monitoring; Electric variables measurement; Electrons; Equations; Numerical simulation; Shape; Silicon; Thermal conductivity; Tunneling;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.543033
Filename :
543033
Link To Document :
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