Title :
Design and implementation of a switched-current memory cell for low-power and weak-current operations
Author :
Wang, Chunyan ; Ahmad, M. Omair ; Swamy, M.N.S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Concordia Univ., Montreal, Que., Canada
fDate :
2/1/2001 12:00:00 AM
Abstract :
This paper describes the design and implementation of a new switched-current (SI) memory cell for current-mode signal processing. The SI memory cell operates in a pico-to-nanoampere range. To obtain an acceptable accuracy, a procedure to reduce the negative effects of the nonideal characteristics of MOS transistor in SI circuits is proposed and implemented. A prototype circuit including the new SI memory cell associated with optical sensors has been fabricated with a 0.35-μm n-well technology. The test results show that, in a range of 0.5 pA to 15 nA, the error rate of current memorization/reproduction in the proposed SI memory is below 1% and the power dissipation is in a range of nanowatts or below
Keywords :
CMOS analogue integrated circuits; analogue processing circuits; analogue storage; current-mode circuits; low-power electronics; switched current circuits; 0.35 micron; 0.5 pA to 15 nA; MOS transistor characteristics; SI memory cell; current-mode signal processing; low-power operation; n-well CMOS technology; nonideal characteristics; optical sensors; pico-to-nanoampere range; power dissipation; switched-current memory cell; weak-current operation; CMOS technology; Capacitors; MOSFETs; Optical sensors; Optical signal processing; Prototypes; Signal design; Signal processing; Switching circuits; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
