Title :
TFTs With High Overlay Alignment for Integration of Flexible Display Backplanes
Author :
Moradi, Maryam ; Pathirane, Minoli ; Sazonov, Andrei ; Chaji, Reza ; Nathan, Arokia
Author_Institution :
Ignis Innovation Inc., Kitchener, ON, Canada
Abstract :
Abstract-This work reports an integration process for hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) backplanes on flexible plastic substrates that attempts to reduce the large misalignment between the successive patterned layers in fabrication. Here, a double-sided adhesive tape is used to attach the plastic substrate to a rigid carrier. The results indicate a reduction of overlay misalignment from 22 μm on free-standing foil to 2 μm when laminated to a rigid carrier for five consecutive mask layers. Electrical characteristics of the fabricated a-Si:H TFTs on 3" round plastic substrates show an ON/OFF current ratio of over 108, field-effect mobility of 0.8 cm2/V · s, and gate leakage current of 10-13 A.
Keywords :
adhesives; amorphous semiconductors; carrier mobility; elemental semiconductors; flexible displays; hydrogen; leakage currents; masks; silicon; thin film transistors; ON-OFF current ratio; Si:H; TFT; double-sided adhesive tape; electrical characteristics; field-effect mobility; flexible display backplane; flexible plastic substrate; free-standing foil; gate leakage current; high overlay alignment; hydrogenated amorphous silicon thin-film transistor; mask layer; successive patterned layer; Educational institutions; Fabrication; Lamination; Plastics; Substrates; Thin film transistors; Amorphous-silicon (a-Si:H); flexible backplanes; overlay misalignment; plastic substrate; thin-film transistors (TFTs);
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2011.2164894
