DocumentCode :
1438418
Title :
Improving performance of non-duplexer active transceiver antenna with defected structures
Author :
Tirado-Mendez, J.A. ; Jardon-Aguilar, H. ; Flores-Leal, Ruben ; Reyes-Ayala, Mario ; Andrade-Gonzalez, E.
Author_Institution :
Center for Res. & Adv. Studies, IPN, Mexico City, Mexico
Volume :
4
Issue :
3
fYear :
2010
fDate :
3/1/2010 12:00:00 AM
Firstpage :
342
Lastpage :
352
Abstract :
The implementation of an active transceiver patch antenna without duplexer is reported. The isolation of the transmitting-receiving ports is increased by almost 20-dB by using defected ground structure patterns obtaining more than 50-dB; besides, cross-polarisation levels are also decreased by more than 15-dB. On the other hand, the use of spur lines allows increasing the linearity of the transmitting path, obtaining a low-harmonic distortion class E power amplifier. In the receiving path, a high-linear low noise amplifier (LNA) is employed with a third-order input intercept point close to 20-dBm. Both amplifiers are built with heterounion bipolar transistor (HBT). To prove the idea, as an example, the operation frequencies and channel separation of the GSM1800 were taken into account for a practical design. The complete active antenna is developed with characteristic impedances different from 50-- to obtain optimal performance of the active blocks.
Keywords :
heterojunction bipolar transistors; low noise amplifiers; microstrip antennas; power amplifiers; transceivers; GSM1800; channel separation; cross-polarisation levels; heterounion bipolar transistor; high-linear low noise amplifier; low-harmonic distortion class E power amplifier; nonduplexer active transceiver patch antenna; operation frequencies;
fLanguage :
English
Journal_Title :
Microwaves, Antennas & Propagation, IET
Publisher :
iet
ISSN :
1751-8725
Type :
jour
DOI :
10.1049/iet-map.2008.0383
Filename :
5430358
Link To Document :
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