Title :
Radiative properties of SIMOX
Author :
Ravindra, Nuggehalli M. ; Abedrabbo, Sufian ; Gokce, Oktay H. ; Tong, Feiming ; Patel, Anamika ; Velagapudi, Rajasekhar ; Williamson, Gary D. ; Maszara, Witold P.
Author_Institution :
New Jersey Inst. of Technol., Newark, NJ, USA
fDate :
9/1/1998 12:00:00 AM
Abstract :
The first experimental results of the temperature dependent radiative properties of separation by implantation of oxygen (SIMOX) wafers, in the literature, have been reported in this study. These measurements have been performed in the temperature range of 17 to 800°C and wavelength range of 0.8 to 20 μm using a spectral emissometer. A modeling approach based on Multi-Rad, a matrix method of representing multi-layers, has been adopted to interpret the experimental data. Operating ranges of wavelength for pyrometry have been suggested for a reliable monitoring of temperature for processing SIMOX wafers
Keywords :
SIMOX; emissivity; spectral methods of temperature measurement; 0.8 to 20 micron; 17 to 800 C; Multi-Rad model; SIMOX wafer; matrix method; multilayer; pyrometry; radiative properties; spectral emissometry; temperature monitoring; Electromagnetic radiation; Mirrors; Optical films; Performance evaluation; Semiconductor device modeling; Silicon on insulator technology; Temperature dependence; Temperature distribution; Temperature measurement; Wavelength measurement;
Journal_Title :
Components, Packaging, and Manufacturing Technology, Part A, IEEE Transactions on
