Influence of post-oxidation cooling rate on residual stress and pn-junction leakage current in LOCOS isolated structures

Author

Smeys, Peter ; Griffin, Peter B. ; Saraswat, Krishna C.

Author_Institution

Dept. of Electr. Eng., Stanford Univ., CA, USA

Volume

43

Issue

11

fYear

1996

fDate

11/1/1996 12:00:00 AM

Firstpage

1989

Lastpage

1993

Abstract

The influence of the cooling rate after field oxidation on n⁺-p junction diodes and residual process-induced stress is characterized. Depending on the cooling rate after field oxidation, the room temperature stress can be significantly higher than the stress induced during oxidation. In regions that are already highly strained, this additional stress may lead to an increase in reverse diode leakage current. Stress relaxation simulations are used to explain the cooling rate dependence of the observed leakage current

Keywords

annealing; cooling; internal stresses; isolation technology; leakage currents; oxidation; p-n junctions; semiconductor diodes; semiconductor process modelling; stress relaxation; thermal stresses; 1000 C; 950 C; LOCOS isolated structures; Si; Si-SiO₂; annealing; field oxidation; n⁺-p junction diodes; pn-junction leakage current; post-oxidation cooling rate; residual stress; reverse diode leakage current; room temperature stress; stress relaxation simulations; thermal stress; Compressive stress; Cooling; Diodes; Leakage current; Oxidation; Residual stresses; Silicon; Temperature dependence; Thermal expansion; Thermal stresses;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.543037

Filename

543037