Title :
Highly strained InGaAs QW VCSEL with lasing wavelength at 1.22 μm
Author :
Ryu, Sang-Wan ; Dapkus, P.D.
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
fDate :
2/1/2001 12:00:00 AM
Abstract :
Vertical cavity surface emitting lasers with a highly strained InGaAs quantum well are demonstrated. Room temperature continuous wave operation was achieved, with a lasing wavelength at 1.22 μm. A high slope efficiency of 0.63 W/A and a maximum power around 1 mW were achieved
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser beams; laser cavity resonators; light sources; optical fibre communication; optical transmitters; quantum well lasers; surface emitting lasers; 1 mW; 1.22 mum; 298 K; InGaAs; InGaAs laser; QW VCSEL; high slope efficiency; highly strained QW VCSEL; highly strained quantum well; lasing wavelength; maximum power; room temperature continuous wave operation; vertical cavity surface emitting lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010126
