DocumentCode
1438644
Title
Numerical analysis of device performance of metamorphic Iny Al1-yAs/InxGa1-xAs (0.3⩽x⩽0.6) HEMTs on GaAs substrate
Author
Happy, Henri ; Bollaert, Sylvain ; Fouré, Hervé ; Cappy, Alain
Author_Institution
Inst. d´´Electron. et de Microelectron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
Volume
45
Issue
10
fYear
1998
fDate
10/1/1998 12:00:00 AM
Firstpage
2089
Lastpage
2095
Abstract
A numerical model describing the influence of InAs mole fraction on metamorphic HEMT structures (MM-HEMT) is proposed. The material properties are calculated using the Monte Carlo method, while the charge control law is calculated using a self-consistent solution of Poisson´s and Schrodinger´s equations. The modeling of the dc, ac, noise and high frequency performance of a device with 0.25-μm gate length is performed using the quasi-two-dimensional (Q2D) approach. This analysis shows that an InAs mole fraction of about 0.40 is an optimum composition for manufacturing high gain, low noise amplifiers. In this range of composition, the performance of MM-HEMT structures is similar to that obtained for lattice-matched HEMTs on InP substrates
Keywords
III-V semiconductors; Monte Carlo methods; Schrodinger equation; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; semiconductor device models; 0.25 micron; GaAs; InAlAs-InGaAs-GaAs; Monte Carlo method; Poisson´s equations; Schrodinger´s equations; charge control law; high frequency performance; low noise amplifiers; metamorphic HEMTs; millimetre-wave FETs; numerical model; quasi-two-dimensional approach; self-consistent solution; Frequency; HEMTs; Low-noise amplifiers; MODFETs; Manufacturing; Material properties; Numerical analysis; Numerical models; Schrodinger equation; mHEMTs;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.725240
Filename
725240
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