Title :
Numerical analysis of device performance of metamorphic Iny Al1-yAs/InxGa1-xAs (0.3⩽x⩽0.6) HEMTs on GaAs substrate
Author :
Happy, Henri ; Bollaert, Sylvain ; Fouré, Hervé ; Cappy, Alain
Author_Institution :
Inst. d´´Electron. et de Microelectron. du Nord, Univ. des Sci. et Tech. de Lille Flandres Artois, Villeneuve d´´Ascq, France
fDate :
10/1/1998 12:00:00 AM
Abstract :
A numerical model describing the influence of InAs mole fraction on metamorphic HEMT structures (MM-HEMT) is proposed. The material properties are calculated using the Monte Carlo method, while the charge control law is calculated using a self-consistent solution of Poisson´s and Schrodinger´s equations. The modeling of the dc, ac, noise and high frequency performance of a device with 0.25-μm gate length is performed using the quasi-two-dimensional (Q2D) approach. This analysis shows that an InAs mole fraction of about 0.40 is an optimum composition for manufacturing high gain, low noise amplifiers. In this range of composition, the performance of MM-HEMT structures is similar to that obtained for lattice-matched HEMTs on InP substrates
Keywords :
III-V semiconductors; Monte Carlo methods; Schrodinger equation; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; semiconductor device models; 0.25 micron; GaAs; InAlAs-InGaAs-GaAs; Monte Carlo method; Poisson´s equations; Schrodinger´s equations; charge control law; high frequency performance; low noise amplifiers; metamorphic HEMTs; millimetre-wave FETs; numerical model; quasi-two-dimensional approach; self-consistent solution; Frequency; HEMTs; Low-noise amplifiers; MODFETs; Manufacturing; Material properties; Numerical analysis; Numerical models; Schrodinger equation; mHEMTs;
Journal_Title :
Electron Devices, IEEE Transactions on
