Title :
High breakdown voltage GaN HFET with field plate
Author :
Li, J. ; Cai, S.J. ; Pan, G.Z. ; Chen, Y.L. ; Wen, C.P. ; Wang, K.L.
Author_Institution :
Device Res. Lab., California Univ., Los Angeles, CA, USA
fDate :
2/1/2001 12:00:00 AM
Abstract :
A novel high breakdown voltage GaN HFET with a field plate (FP GaN HFET) to form a gamma-shape gate is presented. The use of the field plate significantly reduces the field strength under the gate near the drain side. Simulation results show that the peak electric field of the device is reduced from 1.2×106 V/cm to 0.9× 10 6 V/cm for the particular structure used. A high breakdown voltage (over 110 V) is achieved and the average ratio of BVgd over BVgs reaches a value of 2.4, compared to that of only 1.038 for a conventional GaN HFET
Keywords :
III-V semiconductors; gallium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; semiconductor device breakdown; semiconductor device models; wide band gap semiconductors; 110 V; GaN; breakdown voltage; field plate; field strength; gamma-shape gate; high breakdown voltage GaN HFET; high power microwave applications; peak electric field; simulation results;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010091
