• DocumentCode
    1438690
  • Title

    Pnp InGaAsN-based HBT with graded base doping

  • Author

    Monier, C. ; Baca, A.G. ; Chang, P.C. ; Li, N.Y. ; Hou, H.Q. ; Ren, F. ; Pearton, S.J.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL, USA
  • Volume
    37
  • Issue
    3
  • fYear
    2001
  • fDate
    2/1/2001 12:00:00 AM
  • Firstpage
    198
  • Lastpage
    199
  • Abstract
    A grading of the base doping concentration is used to establish an electric field in the base of a Pnp AlGaAs/InGaAsN heterojunction bipolar transistor (HBT). An improved peak current gain value (β≃60) is observed over a device with uniform base doping, due to better hole transport in the base. A cut-off frequency of 15 GHz measured from a 3×12 μm2 non-self aligned HBT demonstrates the practical impact the electric field has on the transit time across the base
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device measurement; semiconductor doping; 15 GHz; AlGaAs-InGaAsN; AlGaAs/InGaAsN Pnp HBT; base doping concentration; cut-off frequency; electric field; graded base doping; heterojunction bipolar transistor; hole transport; nonself aligned HBT; peak current gain; transit time;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20010136
  • Filename
    902812
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1438690