Title :
Characterizing Voltage Linearity and Leakage Current of High Density
MIM Capacitors
Author :
Lee, Sung Kyun ; Kim, Kwan Soo ; Kim, Soon-Wook ; Lee, Dal Jin ; Park, Sang Jong ; Kim, Sibum
Author_Institution :
CE Specialty Process Dev., MagnaChip Semicond. Ltd., Cheongju, South Korea
fDate :
3/1/2011 12:00:00 AM
Abstract :
It was found that the quadratic voltage coefficient of the capacitance (VCC) of Al2O3-based metal-insulator-metal (MIM) capacitors is inversely proportional to the square of the insulator thickness, i.e., ~t-2, whereas HfO2-based MIM capacitors exhibit the inverse cube relationship, i.e., ~t-3. Using each of their voltage linearity characteristics in combination with the VCC calculation method, the quadratic VCC of Al2O3/HfC2/Al2O3 (A/H/A)-structured MIM capacitors, with various thickness ratios of the Al2O3 and HfO2 insulators, could be well estimated. A large portion of the HfO2 insulators in the A/H/A structures improved the voltage linearity of the MIM capacitors, whereas it deteriorated the dielectric breakdown and the leakage current characteristics.
Keywords :
MIM devices; aluminium compounds; capacitors; electric breakdown; hafnium compounds; leakage currents; Al2O3-HfO2; capacitance; dielectric breakdown; high-density MIM capacitors; insulator thickness; inverse cube relationship; leakage current; metal-insulator-metal capacitors; quadratic voltage coefficient; thickness ratios; voltage linearity; Aluminum oxide; Capacitance; Dielectrics; Leakage current; Linearity; MIM capacitors; High-$kappa$ metal–insulator–metal (MIM) capacitors; leakage current; thickness dependence; voltage coefficient of the capacitance (VCC);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2099200