High-Performance Single-Crystal-Like Nanowire Poly-Si TFTs With Spacer Patterning Technique

Author

Kang, Tsung-Kuei ; Liao, Ta-Chuan ; Lin, Chia-Min ; Liu, Han-Wen ; Cheng, Huang-Chung

Author_Institution

Dept. of Electron. Eng., Feng-Chia Univ., Taichung, Taiwan

Volume

32

Issue

3

fYear

2011

fDate

3/1/2011 12:00:00 AM

Firstpage

330

Lastpage

332

Abstract

In this letter, high-performance single-crystal-like nanowire poly-Si TFTs with simple spacer patterning technique were demonstrated and characterized. Due to the nanoscale dimension formed by spacer patterning technique, each nanowire is easily transformed within one crystalline grain of the standard sequential-lateral-solidification (SLS) poly-Si film with the regularly arranged grains and thus performed with a single-crystal like device channel. Due to the high-crystallinity channel, together with the tri-gated structure, the fabricated devices revealed good device integrity of high field-effect mobility of 477 cm²/V · s and good ON/OFF current ratio of 1.07 × 10⁸.

Keywords

elemental semiconductors; nanowires; silicon; thin film transistors; Si; crystalline grain; high-crystallinity channel; single-crystal-like nanowire thin film transistors; spacer patterning technique; standard sequential-lateral-solidification film; trigated structure; Logic gates; Nanoscale devices; Performance evaluation; Silicon; Thin film transistors; Field-effect mobility; nanowire; sequential-lateral-solidification (SLS); single-crystalline-like; spacer patterning; tri-gated structure;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2099198

Filename

5704544