Title :
A metal-ferroelectric PbTiO3-semiconductor switch diode (MFSS) for room-temperature high-speed infrared sensing application
Author :
Chen, F.Y. ; Fang, Y.K. ; Shu, C.Y. ; Chen, Jiann-Ruey
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
11/1/1996 12:00:00 AM
Abstract :
A thin PbTiO3-n-p+ silicon diode (MFSS) has been developed, in which the switching voltage changes in proportion to the infrared light power. The infrared-sensitive parts consist of PbTiO 3 ferroelectric thin films deposited by RF sputtering. A fast response with a rise time of 0.647 μs has been attained, which is fairly fast compared with the other types of thermal infrared sensors. Additionally, there is a wide voltage variation of 9 V for sensing the infrared light from off-state-voltage of 11 V to on-state-voltage of 2 V in the device. In this paper, the current-voltage curves, the effect of infrared light power on switching voltage, and the effects of PbTiO3 thickness on switching voltage as well as sensitivity to infrared light are reported in detail
Keywords :
MIS devices; ferroelectric devices; ferroelectric switching; infrared detectors; lead compounds; photoconducting switches; photodiodes; sputtered coatings; 0.647 mus; PbTiO3 ferroelectric thin film; PbTiO3-Si; RF sputtering; current-voltage curve; metal-ferroelectric-semiconductor switch diode; n-p+ silicon diode; rise time; room-temperature high-speed thermal infrared sensor; switching voltage; Diodes; Infrared sensors; Pyroelectricity; Silicon; Sputtering; Substrates; Switches; Temperature sensors; Transistors; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
